-
1
-
-
0000815007
-
GaN, AlN, and InN: A review
-
Strite S., Morkoc H. GaN, AlN, and InN: a review. J. Vac. Sci. Techonl. B. 10(4):1992;1237-1263.
-
(1992)
J. Vac. Sci. Techonl. B
, vol.10
, Issue.4
, pp. 1237-1263
-
-
Strite, S.1
Morkoc, H.2
-
2
-
-
0028483396
-
Widegap column-III nitride semiconductors for UV/blue light emitting devices
-
Akasaki I., Amano H. Widegap column-III nitride semiconductors for UV/blue light emitting devices. J. Electrochem. Soc. 141(8):1994;2266-2271.
-
(1994)
J. Electrochem. Soc.
, vol.141
, Issue.8
, pp. 2266-2271
-
-
Akasaki, I.1
Amano, H.2
-
3
-
-
0000630386
-
High-quality GaN heteroepitaxial films grown by metal organic chemical vapor deposition
-
Fertitta K.G., Holmes A.L., Neff J.G., Ciuba F.J., Dupuis R.D. High-quality GaN heteroepitaxial films grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 65(14):1994;1823-1825.
-
(1994)
Appl. Phys. Lett.
, vol.65
, Issue.14
, pp. 1823-1825
-
-
Fertitta, K.G.1
Holmes, A.L.2
Neff, J.G.3
Ciuba, F.J.4
Dupuis, R.D.5
-
4
-
-
36449007167
-
Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
-
Molnar R.J., Singh R., Moustakas T.D. Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy. Appl. Phys. Lett. 66(3):1995;268-270.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.3
, pp. 268-270
-
-
Molnar, R.J.1
Singh, R.2
Moustakas, T.D.3
-
5
-
-
4243983080
-
-
MIJ-NSR, Art. G1.6
-
M.S. Shur, A.D. Bykhovski, R. Gasak, M.A. Khan, Pyroelectric and Piezoelectric Properties of GaN-Based Materials, MIJ-NSR, vol. 4s1, Art. G1.6, 1999.
-
(1999)
Pyroelectric and Piezoelectric Properties of GaN-Based Materials
, vol.4 S1
-
-
Shur, M.S.1
Bykhovski, A.D.2
Gasak, R.3
Khan, M.A.4
-
6
-
-
0002156672
-
Some basic aspects of semiconductor gas sensors
-
N. Yamazoe (Ed.), Elsevier, New York
-
N. Yamazoe, N. Miura, Some basic aspects of semiconductor gas sensors, in: N. Yamazoe (Ed.), Chemical Sensor Technology, vol. 4, Elsevier, New York, 1992.
-
(1992)
Chemical Sensor Technology
, vol.4
-
-
Yamazoe, N.1
Miura, N.2
-
7
-
-
0019609585
-
Semiconductor gas sensors
-
Morrison S.R. Semiconductor gas sensors. Sens. Actuators. 2:1982;329-334.
-
(1982)
Sens. Actuators
, vol.2
, pp. 329-334
-
-
Morrison, S.R.1
-
8
-
-
0000887108
-
GaN thin film gas sensors
-
24-27 September, Nagoya, Japan
-
D.-S. Lee, C.-H. Shim, J.-H. Lee, D.-D. Lee, GaN Thin Film Gas Sensors, Technical Digest of International Workshop on Nitride Semiconductors, 24-27 September 2000, Nagoya, Japan, p. 123.
-
(2000)
Technical Digest of International Workshop on Nitride Semiconductors
, pp. 123
-
-
Lee, D.-S.1
Shim, C.-H.2
Lee, J.-H.3
Lee, D.-D.4
-
9
-
-
0032632726
-
High temperature Pt Schottky diode gas sensors on n-type GaN
-
Luther B.P., Wolter S.D., Mohney S.E. High temperature Pt Schottky diode gas sensors on n-type GaN. Sens. Actuators B. 56:1999;164-168.
-
(1999)
Sens. Actuators B
, vol.56
, pp. 164-168
-
-
Luther, B.P.1
Wolter, S.D.2
Mohney, S.E.3
-
14
-
-
0004150437
-
-
Sendai, Japan
-
M. Tajima, T. Nakai, N. Yoshike, Y. Mo, Array-Type Micro-Machined Gas Sensing System, Transducer, Sendai, Japan, 1999, pp. 1016-1019.
-
(1999)
Array-Type Micro-Machined Gas Sensing System, Transducer
, pp. 1016-1019
-
-
Tajima, M.1
Nakai, T.2
Yoshike, N.3
Mo, Y.4
-
15
-
-
0003475406
-
-
Sendai, Japan
-
T. Takada, T. Fukunaga, K. Hayashi, T. Tachibana, K. Miyata, K. Kobashi, Boron-Doped Diamond Thin Film Sensor for Detection of Various Semiconductor Manufacturing Gases, Transducer, Sendai, Japan, 1999, pp. 1024-1027.
-
(1999)
Boron-Doped Diamond Thin Film Sensor for Detection of Various Semiconductor Manufacturing Gases, Transducer
, pp. 1024-1027
-
-
Takada, T.1
Fukunaga, T.2
Hayashi, K.3
Tachibana, T.4
Miyata, K.5
Kobashi, K.6
-
16
-
-
0034723410
-
Nanotube molecular wires as chemical sensors
-
Kong J., Franklin N.R., Zhou C., Chapline M.G., Peng S., Cho K., Dai H. Nanotube molecular wires as chemical sensors. Science. 287:2000;622-625.
-
(2000)
Science
, vol.287
, pp. 622-625
-
-
Kong, J.1
Franklin, N.R.2
Zhou, C.3
Chapline, M.G.4
Peng, S.5
Cho, K.6
Dai, H.7
-
17
-
-
0033715913
-
4 (M = Cu, Zn, Cd and Mg)
-
4 (M = Cu, Zn, Cd and Mg). Sens. Actuators B. 66:2000;178-180.
-
(2000)
Sens. Actuators B
, vol.66
, pp. 178-180
-
-
Chen, N.S.1
Yang, X.J.2
Liu, E.S.3
Huang, J.L.4
-
18
-
-
0000087524
-
Gas detection by activated semiconductor sensor
-
Seiyama T. Gas detection by activated semiconductor sensor. Denki Kagaku. 40(30):1972;81.
-
(1972)
Denki Kagaku
, vol.40
, Issue.30
, pp. 81
-
-
Seiyama, T.1
-
19
-
-
0029755411
-
-
Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., Speck J.S. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. 68(5):1995;643-645.
-
(1995)
Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films
, vol.68
, Issue.5
, pp. 643-645
-
-
Heying, B.1
Wu, X.H.2
Keller, S.3
Li, Y.4
Kapolnek, D.5
Keller, B.P.6
DenBaars, S.P.7
Speck, J.S.8
-
20
-
-
0001809571
-
Conduction and gas response of semiconductor gas sensors
-
P.T. Moseley (Ed.), Adam Hilger, Philadelphia
-
D.E. Williams, Conduction and gas response of semiconductor gas sensors, in: P.T. Moseley (Ed.), Solid State Gas Sensors, Adam Hilger, Philadelphia, 1987.
-
(1987)
Solid State Gas Sensors
-
-
Williams, D.E.1
-
22
-
-
0004062702
-
-
Prentice-Hall, Englewood Cliffs, NJ
-
C.M. Wolfe, N.H. Olonyak Jr., G.E. Stillman, Physical Properties of Semiconductors, Prentice-Hall, Englewood Cliffs, NJ, 1989.
-
(1989)
Physical Properties of Semiconductors
-
-
Wolfe, C.M.1
Olonyak N.H., Jr.2
Stillman, G.E.3
-
24
-
-
0004111960
-
-
VNR, New York
-
N.I. Saz, R.J. Lewis, Hawley's Condensed Chemical Dictionary, seventh ed., VNR, New York, 1987.
-
(1987)
Hawley's Condensed Chemical Dictionary, Seventh Ed.
-
-
Saz, N.I.1
Lewis, R.J.2
|