Improving the performance of green leds by low-temperature annealing of p-gan with pdzn

Electrochemical and Solid-State Letters

Volumn 12, Issue 5, 2009, Pages

  Kim, Ja Yeon ^a,c   Kwon, Min Ki ^a,c   Park, Seong Ju ^a   Kim, Sunwoon ^b   Kim, Je Won ^b   Kim, Yong Chun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE CONCENTRATION; HYDROGEN; LIGHT; LIGHT EMISSION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL PROPERTIES; GREEN LEDS; LIGHT EMITTING DIODE LEDS; LOW ACTIVATIONS; LOW-TEMPERATURE ANNEALING; MULTI-QUANTUM WELLS; THERMAL DAMAGES;

LIGHT EMITTING DIODES;

EID: 62549084297     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3093094     Document Type: Article

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