Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9904-9908

  Park, Seoung Hwan ^a  

^a Catholic University of Daegu   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CRYSTAL ANGLES; EFFECTIVE-MASS THEORY; HOLE EFFECTIVE MASS; INGAN/GAN; INGAN/GAN QUANTUM WELL; INTERBAND TRANSITION ENERGIES; INTERNAL FIELD; MULTIBAND; OPTICAL MATRIX ELEMENT; POLARIZATION EFFECT; RED-SHIFTED; STRUCTURE CHANGE; SUBBANDS; WURTZITES;

ELECTRONIC PROPERTIES; POLARIZATION; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037097965     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480465     Document Type: Article

References (21)

1. S. Nakamura and G. Fasol, The Blue Green Diode (Springer, Berlin, 1997).
2. W. Fang and S. L. Chuang, Appl. Phys. Lett. 67, 751 (1995). apl APPLAB 0003-6951
3. M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys., Part 1 35, L953 (1996). jjb JAPNDE 0021-4922
4. S. H. Park and S. L. Chuang, Appl. Phys. Lett. 72, 287 (1998). apl APPLAB 0003-6951
5. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 68, 2541 (1996). apl APPLAB 0003-6951
6. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 10024 (1997). prb PRBMDO 0163-1829
7. S. H. Park and S. L. Chuang, Appl. Phys. Lett. 72, 3103 (1998). apl APPLAB 0003-6951
8. S. H. Park and S. L. Chuang, Appl. Phys. Lett. 76, 1981 (2000). apl APPLAB 0003-6951
9. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 70, 987 (1997). apl APPLAB 0003-6951
10. A. Niwa, T. Ohtoshi, and T. Kuroda, Appl. Phys. Lett. 70, 2159 (1997). apl APPLAB 0003-6951
11. Y. C. Yeo, T. C. Chong, and M. F. Li, IEEE J. Quantum Electron. 34, 1270 (1998). ejq IEJQA7 0018-9197
12. T. Ohtoshi, A. Niwa, and T. Kuroda, IEEE J. Sel. Top. Quantum Electron. 1, 218 (1998). isq IJSQEN 1077-260X
13. S. H. Park and S. L. Chuang, Phys. Rev. B 59, 4725 (1999). prb PRBMDO 0163-1829
14. F. Mireles and S. E. Ulloa, Phys. Rev. B 62, 2562 (2000). prb PRBMDO 0163-1829
15. T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 39, 413 (2000). jjb JAPNDE 0021-4922
16. S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996). prb PRBMDO 0163-1829
17. J. M. Hinckley and J. Singh, Phys. Rev. B 42, 3546 (1990). prb PRBMDO 0163-1829
18. A. Bykhovski, B. Gelmont, and S. Shur, Appl. Phys. Lett. 63, 2243 (1993). apl APPLAB 0003-6951
19. S. H. Park and S. L. Chuang, J. Appl. Phys. 87, 353 (2000). jap JAPIAU 0021-8979
20. S. H. Park, Jpn. J. Appl. Phys., Part 1 39, 3478 (2000). jjb JAPNDE 0021-4922
21. S. Seki, T. Yamanaka, W. Lui, and K. Yokoyama, J. Appl. Phys. 75, 1299 (1994). jap JAPIAU 0021-8979