Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Li, Shuti ^a   Wu, Qibao ^b   Fan, Guanghan ^a   Zhou, Tianming ^a   Zhang, Yong ^a   Yian, Yin ^a   He, Miao ^a   Cao, Jianxing ^a   Su, Jun ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b China Fangda Group Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; CONTACT LAYERS; GAN-BASED LIGHT-EMITTING DIODES; IN-MOLE-FRACTION; INGAN/GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPERATING VOLTAGE; OUTPUT POWER; SHORT-PERIOD SUPERLATTICES;

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROSTATIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 68949083268     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085016     Document Type: Article

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