Nanopatterned aluminum nitride template for high efficiency light-emitting diodes

Optics Express

Volumn 17, Issue 17, 2009, Pages 14791-14799

  Kim, Sang Mook ^a,b   Park, Tae Young ^a   Park, Seong Ju ^a   Lee, Seung Jae ^b,c   Baek, Jong Hyeob ^b,c   Park, Yun Chang ^d   Jung, Gun Young ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c National NanoFab Center ^*  (South Korea)

^d National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; EFFICIENCY; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; NITRIDES; REFRACTIVE INDEX; SAPPHIRE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTROLUMINESCENCE SPECTRUM; GRADED REFRACTIVE INDICES; LIGHT OUTCOUPLING; LIGHT-EXTRACTION EFFICIENCY; MICRO-RAMAN SPECTRA; SAPPHIRE SUBSTRATES; THREADING DISLOCATION;

LIGHT EMITTING DIODES;

EID: 69049106494     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.014791     Document Type: Article

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