Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

  Lee, Yeonghun ^a   Kakushima, Kuniyuki ^a   Natori, Kenji ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORNER EFFECTS; CROSS-SECTIONAL DISTRIBUTION; KUBO-GREENWOOD FORMULA; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ANALYSIS; MOS-FET; MOSFETS; SILICON NANOWIRES; SPATIALLY RESOLVED; SUB-BANDS; VOLUME INVERSION;

DIELECTRIC DEVICES; ELECTRON MOBILITY; ION BEAMS; MOSFET DEVICES; NANOWIRES; PHONONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 79959456089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592252     Document Type: Article

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