Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Microelectronics Reliability

Volumn 51, Issue 5, 2011, Pages 879-884

  Sato, Soshi ^a   Kakushima, Kuniyuki ^a   Ahmet, Parhat ^a   Ohmori, Kenji ^b   Natori, Kenji ^a   Yamada, Keisaku ^b   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V METHOD; CHANNEL WIDTHS; DRAIN CONDUCTANCE; DRAIN VOLTAGE; EFFECTIVE CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FLAT SURFACES; GATE LENGTH; GATE VOLTAGES; INVERSION CHARGE; INVERSION CHARGE DENSITY; ON-CURRENTS; ROUNDED CORNERS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; STRUCTURAL ADVANTAGE;

CARRIER MOBILITY; ELECTRIC WIRE; MESFET DEVICES; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 79953665506     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.12.007     Document Type: Article

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