Laser scribing of sapphire substrate to increase side light extraction of GaN-based light emitting diodes

Journal of Lightwave Technology

Volumn 29, Issue 13, 2011, Pages 1907-1912

  Chen, K C ^a   Su, Y K ^a   Lin, Chun Liang ^b   Hsu, H C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

GaN based light emitting diodes; laser scribing; rough surfaces; sapphire substrate; side light extraction intensity

Indexed keywords

GAN-BASED LIGHT EMITTING DIODES; LASER SCRIBING; ROUGH SURFACES; SAPPHIRE SUBSTRATE; SIDE LIGHT EXTRACTION INTENSITY;

CHIP SCALE PACKAGES; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GEOMETRICAL OPTICS; LIGHT EMISSION; LIGHT REFLECTION; NEAR FIELD SCANNING OPTICAL MICROSCOPY; REFRACTIVE INDEX; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE MEASUREMENT; SURFACE ROUGHNESS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79959320286     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2011.2140091     Document Type: Article

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