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Volumn 25, Issue 5, 2010, Pages

Nitride-based LEDs with oblique sidewalls and a light guiding structure

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT GUIDING; LIGHT-EXTRACTION EFFICIENCY; OUTPUT INTENSITY; SAPPHIRE SUBSTRATES; SIMPLE METHOD; VERTICAL DIRECTION;

EID: 77951239458     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055010     Document Type: Article
Times cited : (7)

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    • GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
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    • Horng, R.H.1    Yang, C.C.2    Wu, J.Y.3    Huang, S.H.4    Lee, C.E.5    Wuu, D.S.6
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    • Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed Bragg reflector
    • Zhao Y S, Hibbard D L, Lee H P, Ma K, So W and Liu H 2003 Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed Bragg reflector J. Electron. Mater. 32 1523-6
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    • Zhao, Y.S.1    Hibbard, D.L.2    Lee, H.P.3    Ma, K.4    So, W.5    Liu, H.6
  • 12
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    • Lin, C.H.1    Tsai, J.Y.2    Kao, C.C.3    Kuo, H.C.4    Yu, C.C.5    Lo, J.R.6    Leung, K.M.7
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    • Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
    • Cuong T V, Cheong H S, Kim H G, Kim H Y, Hong C H, Suh E K, Cho H K and Kong B H 2007 Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning Appl. Phys. Lett. 90 131107
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 131107
    • Cuong, T.V.1    Cheong, H.S.2    Kim, H.G.3    Kim, H.Y.4    Hong, C.H.5    Suh, E.K.6    Cho, H.K.7    Kong, B.H.8
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.