Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Materials Science and Engineering: B

Volumn 122, Issue 3, 2005, Pages 184-187

  Lee, Y J ^a,b   Hsu, T C ^b   Kuo, H C ^a   Wang, S C ^a   Yang, Y L ^b   Yen, S N ^b   Chu, Y T ^b   Shen, Y J ^b   Hsieh, M H ^b   Jou, M J ^b   Lee, B J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

GaN; InGaN; Patterned sapphire substrate (PSS)

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAY TRACING; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ULTRAVIOLET RADIATION;

GAN; INGAN; LIGHT-OUTPUT EFFICIENCY; PATTERNED SAPPHIRE SUBSTRATE (PSS);

LIGHT EMITTING DIODES;

EID: 24144457521     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.05.019     Document Type: Article

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