Nitride-based LEDs with phosphoric acid etched undercut sidewalls

IEEE Photonics Technology Letters

Volumn 21, Issue 8, 2009, Pages 510-512

  Kuo, D S ^a   Chang, Shoou Jinn ^a   Ko, T K ^b   Shen, C F ^b   Hon, S J ^b   Hung, S C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

^c SHIH CHIEN UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Phosphoric acid etching; Undercut

Indexed keywords

GAN; GAN-BASED LIGHT-EMITTING DIODES; LIGHT-EMITTING DIODE (LED); OUTPUT INTENSITIES; SELECTIVE WET ETCHINGS; UNDERCUT; UNDERCUT SIDEWALLS;

ACIDS; CURRENT DENSITY; DEFECTS; DIODES; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOSPHORIC ACID; SEMICONDUCTING GALLIUM;

WET ETCHING;

EID: 65449184516     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2014078     Document Type: Article

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