Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 464-466

  Tsai, C M ^a   Sheu, J K ^a   Lai, W C ^a   Hsu, Y P ^a   Wang, P T ^b   Kuo, C T ^b   Kuo, C W ^b   Chang, S J ^a   Su, Y K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

Author keywords

InGaN LED; Mg treatment; Textured surfaces; Truncated pyramids

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SURFACE TREATMENT; TEXTURES;

TEXTURED SURFACES; TRUNCATED PYRAMIDS;

LIGHT EMITTING DIODES;

EID: 22944457519     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851243     Document Type: Article

References (8)

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