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Volumn 41, Issue 4 B, 2002, Pages 2484-2488

Intense ultraviolet electroluminescence properties of the high-power InGaN-based light-emitting diodes fabricated on patterned sapphire substrates

Author keywords

Direct current; Hot electron; InGaN; LED; Pulsed current; Ultraviolet

Indexed keywords

ELECTROLUMINESCENCE; INDIUM COMPOUNDS; SAPPHIRE; SEMICONDUCTOR LASERS; ULTRAVIOLET RADIATION;

DIRECT CURRENT; HOT ELECTRON; PULSED CURRENT;

LIGHT EMITTING DIODES;

EID: 0346308766 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2484 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.