Data retention behavior of a SONOS type two-bit storage flash memory cell

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 719-722

  Tsai, W J ^a   Zous, N K ^a   Liu, C J ^a   Liu, C C ^a   Chen, C H ^a   Wang, Tahui ^a   Pan, Sam ^a   Lu, Chih Yuan ^a   Gu, S H ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA TRANSFER; ELECTRIC FIELDS; ELECTRON TRAPS; ELECTRON TUNNELING; HOLE TRAPS; HOT CARRIERS; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; STORAGE ALLOCATION (COMPUTER); THRESHOLD VOLTAGE;

BAND TO BAND HOT HOLE INJECTION; CHANNEL HOT ELECTRON INJECTION; CHARGE DENSITY; DATA RETENTION; FRENKEL- POOLE EMISSION; HOT ELECTRON PROGRAMMING; HOT HOLE ERASE; MULTIPLEX VIRTUAL GROUND; OXIDE TRAP ASSISTED TUNNELING; SONOS CELLS;

FLASH MEMORY;

EID: 0035714879     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. On the go with SONOS
2. A true single-transistor oxide-nitride-oxide EEPROM device
3. NROM: A novel localized trapping, 2-bit nonvolatile memory cell
4. High performance SONOS memory cells free of drain turn-on and over-erase: Compatibility issue with current flash technology
5. Properties of MNOS structures
6. Reliability aspects of a floating gate EEPROM
7. Tunneling discharge of trapped holes in silicon dioxide
8. Hot hole stress induced leakage current (SILC) transient in tunnel oxides
9. Effects of two-step high temperature deuterium anneals on SONOS nonvolatile memory devices