The kinetics of degradation of data retention of post-cycled NROM non-volatile memory products

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 175-180

  Janai, Meir ^a   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

Author keywords

A SiNx; Activation energy; Amorphous semiconductors; Dispersive transport; Meyer Neldel rule; NROM; NVM

Indexed keywords

A-SINX; AMORPHOUS SEMICONDUCTORS; DISPERSIVE TRANSPORT; MEYER NELDEL RULE; NROM; NVM;

ACTIVATION ENERGY; AMORPHOUS MATERIALS; DATA REDUCTION; ROM; SEMICONDUCTOR JUNCTIONS; SILICA; THRESHOLD VOLTAGE;

NONVOLATILE STORAGE;

EID: 28744450020     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (30)

1. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, D. Finzi. "Can NROM, a 2-bit trapping storage cell, give a real challenge to floating gate cells?" in Proc. SSDM 1999, Tokyo, Japan, pp. 522-524, Sept. 1999.
2. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, D. Finzi, "NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell", in IEEE Electron Device Lett. vol. 21 pp. 543-545, Nov. 2000.
3. M. Janai, B. Eitan, A. Shappir, E. Lusky, I. Bloom and G. Cohen, "Data retention reliability model of NROM nonvolatile memory products'', in IEEE Transactions on Device and Materials Reliability, 4, (2004) pp. 404-415
4. M. Janai, "Data Retention, Endurance and Acceleration Factors of NROM Devices", in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp. 502-505.
5. H. P. Belgal, N. Righos, I. Kalastirsky, J. J. Peterson, R. Shiner and N. Mielke, "A new reliability model for post-cycling charge retention of flash memories", in Proc. of the IEEE International Reliability Physics Symposium 40 (2002) pp. 7-20.
6. W. Meyer and H. Neldel, Z. Tech. Phys. 12, 588 (1937).
7. J. Kakalios, R. A. Street and W. B. Jackson, "Stretched-Exponential Relaxation Arising from Dispersive Diffusion of Hydrogen in Amorphous Silicon", Phys. Rev. Lett. 59 (1987) pp.1037-1040;
8. R. A. Street, C. C. Tsai, J. Kakalios and W. B. Jackson, Phil. Mag. 56, (1987) p. 305;
9. H. Scher, M. F. Shlesinger and J. T. Bendler, "Time scale invariace in transport and relaxation" Physics Today (AIP, Jan. 1991) pp. 26-34.
10. W. B. Jackson and J. Kakalios, "Kinetics of carrier-induced metastable defect formation in hydrogenated amorphous silicon", in Amorphous Silicon and Related Materials, ed. H. Fritzsche (World Scientific Publishing Company, Singapore, 1988) pp. 247-295.
11. R. G. Palmer, D. L. Stein, E. Abrahams and P. W. Anderson, "Models of Hierarchically Constrained Dynamics for Glassy Relaxation" Phys. Rev. Lett 53 (1984) pp. 958-961
12. M. F. Shlesinger and E. W. Montroll, "On the Williams-Watts Function of Dielectric relaxation", Proc. Natl. Acad. Sci. USA, 81, (1984) pp. 1280-1283
13. H. Scher and E. W. Montroll. "Anomalous transit-time dispersion in amorphous solids", Phys. Rev. B12 (1975) pp. 2455-2477.
14. W. B. Jackson, "Connection between the Meyer-Neldel relation and multiple-trapping transport", Phys. Rev. B38, pp.3595-3598, 1988.
15. R. S. Crandall, "Defect relaxation in amorphous silicon: Stretched exponential, the Meyer-Neldel rule and the Staebler-Wronski effect", Phys. Rev. B 43, (1991) pp.4057-4070.
16. Y. F. Chen and F. F. Huang. "Connection between the Meyer Neldel rule and stretched exponential relaxation", Pys. Rev. B44, (1991) pp. 13775-13778.
17. J. H. Schon, "Correlation of the Meyer-Neldel Rule and Persistance Photoconductivity in the Organic Semiconductor a-Sexithiophene", in Defect and Diffusion Forum Vol. 192-193, ed. D. J. Fisher, (Science Publications, Switzerland, 2001) pp.37-42
18. W.J. Tsai, N.K. Zous, C.J. Liu, C.H. Chen, T. Wang, S. Pan and C.Y. Lu, "Data Retention of a SONOS type Two-bit Storage Flash Memory Cell", in IEDM Tech. Digest (2001) pp. 719-722.
19. T. Wang, W.J. Tsai, S.H. Gu, C.T. Chan, C.C. Yeh, N.K. Zous, T.C. Lu, S. Pan and C.Y. Lu, "Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells", in IEDM Tech. Digest (Washington D.C., Dec. 2003).
20. A Shappir, Y. Shacham-Diamand, E. Lusky, I. Bloom and B. Eitan, "Lateral Charge Transport in the Nitride Layer of the NROM Non-Volatile Memory Device" in INFOS June 2003,
21. and in Microelectronic Engineering 72, (2004) p. 426-433.
22. M. Stutzmann, W. B. Jackson and C.C. Tsai, "Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study", Phys. Rev. B32, 23 (1985)
23. H. Fritzsche, "Search for explaining the Staebler-Wronski Effect", in Amorphous and Microcrystalline Silicon Technology, Mat. Res. Soc. 467 (1997) pp19-30;
24. H. Fritzsche, "Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H". Annu.Rev. Mater. Rev. 31(2001) pp. 47-79.
25. J.H. Stathis, "Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits", IEEE Trans. Device & Mater. Reliability, 1 March 2001 pp. 43-59;
26. J.H. Stathis, "Reliability limits for the gate insulator in CMOS technology", IBM J. Res. & Dev. 46 March 2002 pp.265-286.
27. S. Tsujikawa, T. Mine, K. Watanabe, Y. Shimamoto, R. Tsuchiya, K. Ohnishi, T. Onai, J. Yugami and S. Kimura, "Negative bias Temperature Instability of pMOSFETs with Ultra-thin SiON Gate Dielectric", in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp. 183-188.
28. M.H.W.M. van Delden and P.J. van der Wel, "Reliability and electric properties of PECVD a-SiNx:H films with an optical bandgap ranging from 2.5 to 5.38 eV", in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp.293-297.
29. J.D. Lee, J.H. Choi, D. Park and K. Kim, Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90-nm NAND flash memory cells", in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp. 497-501.
30. H. Huard, F. Monsieur, G. Ribes and S. Bruyere, "Evidence for hydrogen-related defects during NTBI stress in p-MOSFETs", in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp. 178-182.