Spatial characterization of localized charge trapping and charge redistribution in the NROM device

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1489-1495

  Shappir, Assaf ^a,b   Levy, David ^a   Shacham Diamand, Yosi ^a   Lusky, Eli ^b   Bloom, Ilan ^b   Eitan, Boaz ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b Saifun Semiconductors Ltd   (Israel)

Author keywords

GIDL; Localized trapped charge; NROM; ONO; Subthreshold

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; OPTIMIZATION; RELIABILITY; ROM; THRESHOLD VOLTAGE;

GIDL; LOCALIZED TRAPPED CHARGE; NROM; ONO; SUBTHRESHOLD;

DIELECTRIC MATERIALS;

EID: 2942657319     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.013     Document Type: Conference Paper

References (12)

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