Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 960-963

  Chou, Y L ^a   Chiu, J P ^a   Ma, H C ^a   Wang, Tahui ^a,b   Chao, Y P ^b   Chen, K C ^b   Lu, Chih Yuan ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE TRAPS; LATERAL SPREAD; POTENTIAL VARIATIONS; PROGRAM/ERASE; RANDOM TELEGRAPH SIGNALS; SONOS FLASH MEMORY;

TELEGRAPH;

FLASH MEMORY;

EID: 77957896953     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488696     Document Type: Conference Paper

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