Suppression of erased state Vt drift in two-bit per cell SONOS memories

IEEE Electron Device Letters

Volumn 26, Issue 1, 2005, Pages 35-37

  Roizin, Yakov ^a   Pikhay, Evgeny ^a   Gutman, Micha ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

NROM; Oxide nitride oxide (ONO); Reliability; Silicon oxide nitride oxide silicon (SONOS) memory

Indexed keywords

HOLE TRAPS; LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS; THICKNESS MEASUREMENT; THIN FILM DEVICES; THRESHOLD VOLTAGE;

HOLE INJECTION; NROM; SILICON OXIDE NITRIDE OXIDE SILICON (SONOS) MEMORY; SINGLE CELLS;

ROM;

EID: 12444297623     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.840711     Document Type: Article

References (8)

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