Charge Gain, NBTI, and random telegraph noise in EEPROM flash memory devices

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1038-1040

  Janai, Meir ^a   Bloom, Ilan ^a  

^a Saifun Semiconductors Ltd   (Israel)

Author keywords

EEPROM; Flash memory; negative bias temperature instability (NBTI); nonvolatile memory (NVM); NROM; random telegraph noise (RTN)

Indexed keywords

EEPROM; NEGATIVE BIAS TEMPERATURE INSTABILITY; NONVOLATILE MEMORY (NVM); NROM; RANDOM TELEGRAPH NOISE;

MOS DEVICES; NITRIDES; TELEGRAPH;

FLASH MEMORY;

EID: 77956173215     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058088     Document Type: Article

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