Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

Materials Research Bulletin

Volumn 46, Issue 8, 2011, Pages 1272-1275

  Leone, S ^a   Beyer, F C ^a   Pedersen, H ^a   Kordina, O ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A. Semiconductors; B. Epitaxial growth; C. Atomic force microscopy; D. Crystal structure

Indexed keywords

A. SEMICONDUCTORS; B. EPITAXIAL GROWTH; C. ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOUR DEPOSITION; D. CRYSTAL STRUCTURE; DEFECT-FREE; DEVICE PERFORMANCE; HIGH GROWTH RATE; HIGH QUALITY; HIGH RATE; HYDROGEN CHLORIDE; IN-SITU; LOW TEMPERATURES; OFF-AXIS; SIC EPILAYERS; SMOOTH SURFACE; STEP BUNCHING; SURFACE PREPARATION;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CRYSTAL STRUCTURE; DEFECTS; EPILAYERS; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE DEFECTS; SURFACE ROUGHNESS;

SEMICONDUCTOR GROWTH;

EID: 79958080473     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.03.029     Document Type: Article

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