In situ etching of 4H-SiC in H2 with addition of HCl for epitaxial CVD growth

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 239-242

  Zhang, J ^a   Kordina, O ^a   Ellison, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

CVD; Etching; Surface preparation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; OPTIMIZATION; SILICON CARBIDE; ETCHING; MORPHOLOGY;

ETCHING GAS; SURFACE PREPARATION; CVD GROWTHS; CVD REACTORS; ETCH MECHANISM; ETCH PARAMETERS; ETCH RATES; IN-SITU ETCHING;

ETCHING; SILICON CARBIDE;

EID: 33747093583     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (4)

1. A.A. Burk Jr. and L.B. Rowland, J. Cryst. Growth 167 (1996), p. 586
2. J.A. Powell and D.J. Larkin, phys. stat.sol. (b) 202 (1997), p. 529
3. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina and E. Janzén, J. Cryst. Growth 181 (1997), p. 241
4. O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son and E. Janzén, phys. stat.sol. (b) 202 (1997), p. 321