Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics

Microelectronics Reliability

Volumn 46, Issue 8, 2006, Pages 1295-1302

  Kumta, A ^a   Rusli, ^a   Tin, Chin Che ^b   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; PERMITTIVITY; SILICA; SILICON CARBIDE;

BLOCKING VOLTAGES; DIELECTRIC BREAKDOWN; DIELECTRIC THICKNESS;

SCHOTTKY BARRIER DIODES;

EID: 33746189564     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.11.009     Document Type: Article

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