The influence of high-temperature annealing on SiC Schottky diode characteristics

Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1466-1470

  Zhang, Q ^a   Sudarshan, T S ^a  

^a University of South Carolina   (United States)

Author keywords

Annealing; Barrier inhomogeneities; Schottky diodes; SiC

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SILICON CARBIDE;

REVERSE CURRENTS;

SCHOTTKY BARRIER DIODES;

EID: 0035516926     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0203-z     Document Type: Article

References (11)