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Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1847-1850

Lateral current spreading in SiC Schottky diodes using metal overlap edge termination

(2) Zhang, Q a Sudarshan, T S a

a The Department of Mechanical Engineering (United States)

Author keywords

Accumulation layer; Lateral current spreading; Metal overlap termination; Schottky diode

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SILICON CARBIDE;

LATERAL CURRENT SPREADING;

SCHOTTKY BARRIER DIODES;

EID: 0035478596 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00191-5 Document Type: Article

Times cited : (14)

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8
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.