Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 437-444

  Chang, Shu Cheng ^a   Wang, Shui Jinn ^a   Uang, Kai Ming ^a   Liou, Bor Wen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Breakdown voltage; Edge termination; Floating metal ring; Schottky barrier diodes; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; PARAMETER ESTIMATION; PRODUCT DESIGN; SILICON CARBIDE;

DEVICE PERFORMANCE; EDGE TERMINATION; FLOATING METAL RINGS; OPERATION TEMPERATURES;

SCHOTTKY BARRIER DIODES;

EID: 12344323963     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.006     Document Type: Article

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