Optical characterization of nanoporous GaN through electroless wet chemical etching

Materials Science- Poland

Volumn 26, Issue 3, 2008, Pages 609-615

  Chuah, L S ^a   Hassan, Z ^a   Hassan, H Abu ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Electrochemical etching; Photoluminescence; Porous GaN; RF MBE; Si

Indexed keywords

CRYSTAL GROWTH; ETCHING; GALLIUM NITRIDE; HYDROFLUORIC ACID; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPACE OPTICS;

ELECTROCHEMICAL ETCHING; PHOTOLUMINESCENCE; POROUS GAN; RF-MBE; SI;

GALLIUM ALLOYS;

EID: 51549084437     PISSN: 01371339     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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