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Volumn 37, Issue 3, 2008, Pages 285-288

Nanoporous GaN film generated by electro chemical etching

Author keywords

Optical properties; Porous GaN; Structural properties

Indexed keywords


EID: 51649101688     PISSN: 01266039     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (7)
  • 1
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • Canham, L.T. 1990. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57: 1046-1048.
    • (1990) Appl. Phys. Lett , vol.57 , pp. 1046-1048
    • Canham, L.T.1
  • 5
    • 79956042420 scopus 로고    scopus 로고
    • In-plane bandgap control in porous GaN through electroless wet chemical etching
    • Li, X., Kim, Y-W., Bohn P.W. & Adesida, I. 2002. In-plane bandgap control in porous GaN through electroless wet chemical etching. Appl. Phys. Lett. 80: 980-982.
    • (2002) Appl. Phys. Lett , vol.80 , pp. 980-982
    • Li, X.1    Kim, Y.-W.2    Bohn, P.W.3    Adesida, I.4
  • 7
    • 0342927489 scopus 로고    scopus 로고
    • Detection of fluorophosphonate chemical warfare agents by catalytic hydrolysis with a porous silicon interferometer
    • Sohn, H., Letant, S., Sailor, M.J. & Trogler, W.C. 2000. Detection of fluorophosphonate chemical warfare agents by catalytic hydrolysis with a porous silicon interferometer. J. Am. Chem. Soc. 122: 5399-5400.
    • (2000) J. Am. Chem. Soc , vol.122 , pp. 5399-5400
    • Sohn, H.1    Letant, S.2    Sailor, M.J.3    Trogler, W.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.