Porous GaN prepared by UV assisted electrochemical etching

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3469-3474

  Yam, F K ^a   Hassan, Z ^a   Ng, S S ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

PL; Porous GaN; Raman scattering; XRD

Indexed keywords

ELECTROCHEMISTRY; ETCHING; PHOTOLUMINESCENCE; POROUS MATERIALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

CELL DISTORTION; ELECTROCHEMICAL ETCHING; LATTICE MISMATCH; STRAIN INDUCED STRUCTURAL DEFECTS;

GALLIUM NITRIDE;

EID: 33846910863     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.104     Document Type: Article

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