Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

Applied Physics Letters

Volumn 82, Issue 5, 2003, Pages 739-741

  Kim, Jihyun ^a   Ren, F ^a   Gila, B P ^a   Abernathy, C R ^a   Pearton, S J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC CRACKING; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HYDROGEN; NITROGEN; PALLADIUM; PLATINUM; THERMAL EFFECTS;

EFFECTIVE BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0037415829     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1541944     Document Type: Article

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