SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

Toward the understanding of stacked Al-based high-k dielectrics for passivation of 4H-SiC devices

(5) Usman, Muhammad a Halĺn, Anders a Pilvi, Tero b Schöner, Adolf c Leskelä, Markku b

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b UNIVERSITY OF HELSINKI (Finland)

c ACREO AB (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALTERNATE LAYERS; BEFORE AND AFTER; BOTTOM LAYERS; BREAKDOWN BEHAVIOR; BREAKDOWN VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS; HIGH TEMPERATURE; HIGH-K DIELECTRIC; HIGH-K MATERIALS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; POLYCRYSTALLINE STRUCTURE; ROOM TEMPERATURE; SIC DEVICES; STACKED DIELECTRICS; STEP BUNCHING;

ALUMINUM; ATOMIC LAYER DEPOSITION; EPITAXIAL GROWTH; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; SILICON CARBIDE; VOLTAGE MEASUREMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951996830 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3517137 Document Type: Article

Times cited : (29)

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