Development of post-CMP cleanup processing for Cu/low-k devices

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 89, Issue 11, 2006, Pages 19-30

  Kodera, Masako ^a,b   Uekusaka, Shin Ichiro ^b   Nishioka, Yukiko ^a   Nagano, Hidekazu ^a   Inoue, Tatsuo ^a   Tokushige, Katsuhiko ^a   Fukunaga, Akira ^a   Tsujimura, Manabu ^a   Tanaka, Yoshitsugu ^c   Nagai, Hiroyuki ^c   Maekawa, Kaoru ^c  

^a EBARA CORPORATION   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

CMP; Cu; Low k; Postcleanup

Indexed keywords

CLEANING; CONTAMINATION; COPPER; HYDROPHOBICITY; LEAKAGE CURRENTS; LSI CIRCUITS; SLURRIES;

CLEANING FLUIDS; POST-CHEMICAL-MECHANICAL PLANARIZATION; ULTRALARGE-SCALE INTEGRATION;

DIELECTRIC FILMS;

EID: 33750882225     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20187     Document Type: Article

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