A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Fu, Dejun ^a   Yuldashev, Shavakat U ^a   Kim, Nam Hwa ^a   Ryu, Young Sun ^a   Yun, Jae Sung ^a   Park, Seung Ho ^a   Kang, Tae Won ^a   Chung, Kwan Soo ^b  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Defect; GaN; Passivation; Photoconductivity; Photoelectrochemical oxidation

Indexed keywords

CRYSTAL DEFECTS; ELECTROCHEMISTRY; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL VARIABLES MEASUREMENT; OXIDATION; PASSIVATION; PHOTOCHEMICAL REACTIONS; PHOTOCONDUCTIVITY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

GALLIUM NITRIDE; PHOTOELECTROCHEMICAL OXIDATION;

SEMICONDUCTING FILMS;

EID: 0035862501     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l10     Document Type: Article

References (15)