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Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2449-2453

High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2

(10) Yoon, Tae Sik a Kwon, Jang Yeon a Lee, Dong Hoon a Kim, Ki Bum a Min, Seok Hong b Chae, Dong Hyuk a Kim, Dae Hwan a Lee, Jong Duk a Park, Byung Gook a Lee, Hwack Joo c

a Seoul National University (South Korea)

b Gangneung Wonju National University (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001156475 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.372200 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.