Numerical investigation of transient capacitances of Ge/Si heteronanocrystal memories in retention mode

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Zhu, Yan ^a   Zhao, Dengtao ^a   Liu, Jianlin ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DEEP LEVEL TRANSIENT SPECTROSCOPY; GERMANIUM; NUMERICAL METHODS; SILICON;

FLATBAND VOLTAGE SHIFTS; GESI HETERONANOCRYSTAL MEMORIES; HETERONANOCRYSTALS; TRANSIENT CAPACITANCES;

NANOSTRUCTURED MATERIALS;

EID: 33847094135     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434947     Document Type: Article

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