-
1
-
-
79955818018
-
Intel 1999
-
In
-
Pollack F. Intel 1999. In: ITRS 2005
-
(2005)
ITRS
-
-
Pollack, F.1
-
2
-
-
79955802342
-
SIA, Semiconductor Industry Challenges 2007-2010
-
In
-
Scalise G. SIA, Semiconductor Industry Challenges 2007-2010. In: IC China 2007
-
(2007)
IC China
-
-
Scalise, G.1
-
3
-
-
79955796862
-
-
http://msn.chinabyte.com/a/8834814.shtml
-
-
-
-
6
-
-
72449136291
-
-
American Council for an Energy-Efficient Economy, "Skip" Laitner
-
American Council for an Energy-Efficient Economy, John A. "Skip" Laitner, Chris Poland Knight, Vanessa L. McKinney, Karen Ehrhardt-Martinez, Semiconductor Technologies: The Potential to Revolutionize U.S. Energy Productivity. Environmental Quality Management, 2009, 19, 29
-
(2009)
Semiconductor Technologies: The Potential to Revolutionize U.S. Energy Productivity. Environmental Quality Management
, vol.19
, pp. 29
-
-
John, A.1
Knight, C.P.2
McKinney, V.L.3
Ehrhardt-Martinez, K.4
-
7
-
-
79955838628
-
-
Wang Y Y, ed., Wu H M, Ji M H, Xiao D Y., Chap. 3, Beijing: Science Press
-
Wang Y Y, ed., Wu H M, Ji M H, Xiao D Y. Green Micro/Nano Electronics. Chap. 3. Beijing: Science Press, 2010. 163-220
-
(2010)
Green Micro/Nano Electronics
, pp. 163-220
-
-
-
9
-
-
79955850254
-
-
Wang Y Y, ed., Wei S J, Yin S Y, Yan X L, Chap. 2. Beijing: Science Press
-
Wang Y Y, ed., Wei S J, Yin S Y, Yan X L. Green Micro/Nano Electronics. Chap. 2. Beijing: Science Press, 2010. 102, 126
-
(2010)
Green Micro/Nano Electronics
, vol.102
, pp. 126
-
-
-
10
-
-
79955815714
-
-
note
-
Private Communication between Prof. Wang Yangyuan and Cheng Yuhua
-
-
-
-
12
-
-
79955849829
-
-
Wang Y Y, ed., Li S W, Cheng Y H, Song F B, et al., Chap. 4. Beijing: Science Press
-
Wang Y Y, ed., Li S W, Cheng Y H, Song F B, et al. Green Micro/Nano Electronics. Chap. 4. Beijing: Science Press. 2010. 250
-
(2010)
Green Micro/Nano Electronics
, pp. 250
-
-
-
14
-
-
17444390076
-
A novel nanoscaled device concept: Quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET
-
Tian Y, Huang R, Zhang X, et al. A novel nanoscaled device concept: quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET. IEEE Trans Electr Dev, 2005, 52: 561
-
(2005)
IEEE Trans Electr Dev
, vol.52
, pp. 561
-
-
Tian, Y.1
Huang, R.2
Zhang, X.3
-
15
-
-
38349123944
-
Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structure
-
Zhou F L, Huang R, Wu D K, et al. Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structure. J Electrochem Soc, 2008, 155: H202-H204
-
(2008)
J Electrochem Soc
, vol.155
-
-
Zhou, F.L.1
Huang, R.2
Wu, D.K.3
-
16
-
-
56549107942
-
High-performance BOI FinFETs based on bulk-silicon substrate
-
Xu X Y, Wang R S, Huang R, et al. High-performance BOI FinFETs based on bulk-silicon substrate. IEEE Trans Electr Dev, 2008, 55: 3246
-
(2008)
IEEE Trans Electr Dev
, vol.55
, pp. 3246
-
-
Xu, X.Y.1
Wang, R.S.2
Huang, R.3
-
17
-
-
49249101232
-
New self-aligned silicon nanowire transistors on bulk substrate fabricated by epi-free compatible CMOS technology: Process integration, experimental characterization of carrier transport and low frequency noise
-
In
-
Tian Y, Huang R, Wang Y Q, et al. New self-aligned silicon nanowire transistors on bulk substrate fabricated by epi-free compatible CMOS technology: Process integration, experimental characterization of carrier transport and low frequency noise. In: IEEE International Electron Devices Meeting, 2007. 895
-
(2007)
IEEE International Electron Devices Meeting
, pp. 895
-
-
Tian, Y.1
Huang, R.2
Wang, Y.Q.3
-
18
-
-
79955875455
-
-
Wang Y Y, ed., Huang R, Zhang X, Liu J H., Chap. 5, Beijing: Science Press
-
Wang Y Y, ed., Huang R, Zhang X, Liu J H. Green Micro/Nano Electronics. Chap. 5. Beijing: Science Press, 2010. 311-349
-
(2010)
Green Micro/Nano Electronics
, pp. 311-349
-
-
-
20
-
-
77950688732
-
Investigation into the output characteristics and improvement of operation margin of IMOS (impact ionization MOS) devices
-
In
-
Liu H C, Huang R, Wang Z H. Investigation into the output characteristics and improvement of operation margin of IMOS (impact ionization MOS) devices. In: ECS Transactions, 2009. 21
-
(2009)
ECS Transactions
, pp. 21
-
-
Liu, H.C.1
Huang, R.2
Wang, Z.H.3
-
21
-
-
33847746657
-
A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics
-
In
-
Kam H, Lee D T, Howe R T, et al. A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics. In: IEEE International Electron Devices Meeting, 2008. 463
-
(2008)
IEEE International Electron Devices Meeting
, pp. 463
-
-
Kam, H.1
Lee, D.T.2
Howe, R.T.3
-
23
-
-
36849125984
-
Low-frequency negative resistance in thin anodic oxide films
-
Hickmott T W. Low-frequency negative resistance in thin anodic oxide films. J Appl Phys 1962, 33: 2669
-
(1962)
J Appl Phys
, vol.33
, pp. 2669
-
-
Hickmott, T.W.1
-
24
-
-
0015127532
-
Memristor-The missing circuit element
-
Chua L O. Memristor-The missing circuit element. IEEE Trans Circ Theory, 1971, CT-18: 507
-
(1971)
IEEE Trans Circ Theory
, vol.CT-18
, pp. 507
-
-
Chua, L.O.1
-
25
-
-
79955870704
-
-
Wang Y Y, ed., Kang J F, Wang Y., Chap. 6, Beijing: Science Press
-
Wang Y Y, ed., Kang J F, Wang Y. Green Micro/Nano Electronics. Chap. 6. Beijing: Science Press, 2010. 367-370
-
(2010)
Green Micro/Nano Electronics
, pp. 367-370
-
-
-
26
-
-
71049184870
-
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology
-
In
-
Gao B, Zhang H W, Yu S, et al. Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology. In: Symposium on VLSI Technology, Tech. Dig., 2009. 30
-
(2009)
Symposium on VLSI Technology, Tech. Dig
, pp. 30
-
-
Gao, B.1
Zhang, H.W.2
Yu, S.3
-
27
-
-
68249137194
-
Unipolar resistive switch based on silicon monoxide realized by CMOS technology
-
Zhang L J, Huang R, Gao D J, et al. Unipolar resistive switch based on silicon monoxide realized by CMOS technology. IEEE Electr Dev Lett, 2009, 30: 870
-
(2009)
IEEE Electr Dev Lett
, vol.30
, pp. 870
-
-
Zhang, L.J.1
Huang, R.2
Gao, D.J.3
-
29
-
-
79955846604
-
-
http://www.nlc.gov.cn/index.htm
-
-
-
-
30
-
-
79955810676
-
-
note
-
Private Communication between Prof. Wang Yangyuan and Wu Hanming
-
-
-
-
32
-
-
0037221191
-
Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect
-
Liu X Y, Kang J F, Han R Q. Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect. Solid State Commun, 2003, 125: 219-223
-
(2003)
Solid State Commun
, vol.125
, pp. 219-223
-
-
Liu, X.Y.1
Kang, J.F.2
Han, R.Q.3
-
34
-
-
79955795941
-
-
Wang Y Y, ed., Wu H M, Ji M H, Xiao D Y., Chap. 3, Beijing: Science Press
-
Wang Y Y, ed., Wu H M, Ji M H, Xiao D Y. Green Micro/Nano Electronics. Chap. 3. Beijing: Science Press, 2010. 216
-
(2010)
Green Micro/Nano Electronics
, pp. 216
-
-
-
36
-
-
34848856167
-
2 gate dielectrics with HfN electrodes for advanced CMOS applications
-
2 gate dielectrics with HfN electrodes for advanced CMOS applications. J Electrochem Soc, 2007, 154: H927-H932
-
(2007)
J Electrochem Soc
, vol.154
-
-
Kang, J.F.1
Yu, H.Y.2
Ren, C.3
-
38
-
-
0033697430
-
Highly thermal-stable, plasma-polymerrized BCB polymer film (k=2.6) for Cu dual-damascene interconnects
-
In
-
Kawahara J, Shiba K, Tagami M, et al. Highly thermal-stable, plasma-polymerrized BCB polymer film (k=2.6) for Cu dual-damascene interconnects. In: 2000 Symposium on VLSI Technology Digest of Technical Papers, 2000. 20
-
(2000)
2000 Symposium on VLSI Technology Digest of Technical Papers
, pp. 20
-
-
Kawahara, J.1
Shiba, K.2
Tagami, M.3
-
39
-
-
29144490505
-
Development of ULSI interconnect integration technology-copper interconnect with low-k dielectrics
-
Wang Y Y, Kang J F. Development of ULSI interconnect integration technology-copper interconnect with low-k dielectrics. Chinese J Semiconduct, 2002, 23: 1121
-
(2002)
Chinese J Semiconduct
, vol.23
, pp. 1121
-
-
Wang, Y.Y.1
Kang, J.F.2
-
40
-
-
70350630227
-
Plasma cure process for porous SiOCH films using CF4 gas
-
In
-
Tomioka K, Nakahira J, Kondo S, et al. Plasma cure process for porous SiOCH films using CF4 gas. In: SSDM, 2007. 266
-
(2007)
SSDM
, pp. 266
-
-
Tomioka, K.1
Nakahira, J.2
Kondo, S.3
-
41
-
-
79955842295
-
Self-assembly based air-gap integration
-
Ponoth S, Horak D, Nitta S, et al. Self-assembly based air-gap integration. http://www.electrochem.org/meetings/scheduler/ abstracts/214/2074.pdf, 214th ECS meeting, 2008
-
(2008)
214th ECS meeting
-
-
Ponoth, S.1
Horak, D.2
Nitta, S.3
-
42
-
-
50949091865
-
Cost effective air-gap interconnects by all-in-one post-removing process
-
In
-
Nakamura N, Matsunaga N, Kaminatsui T, et al. Cost effective air-gap interconnects by all-in-one post-removing process. In: IITC, 2008. 193
-
(2008)
IITC
, pp. 193
-
-
Nakamura, N.1
Matsunaga, N.2
Kaminatsui, T.3
-
43
-
-
66449119228
-
-
The International Technology Roadmap for Semiconductors (ITRS) Roadmap
-
The International Technology Roadmap for Semiconductors (ITRS) Roadmap. ITRS Roadmap 2009, http://public.itrs. net/
-
(2009)
ITRS Roadmap
-
-
-
44
-
-
34648862054
-
A litho-only approach to double patterning
-
In, San Jose
-
Vanleenhove A, Steenwinckel D V. A litho-only approach to double patterning. In: Proc of SPIE, San Jose, 2007. 6520, 65202F01-65202F10
-
(2007)
Proc of SPIE
-
-
Vanleenhove, A.1
Steenwinckel, D.V.2
-
45
-
-
79955871765
-
-
Wang Y Y, ed., Li Z H, Wu W G., Chap.7. Beijing: Science Press
-
Wang Y Y, ed., Li Z H, Wu W G. Green Micro/Nano Electronics. Chap.7. Beijing: Science Press, 2010. 435, 458
-
(2010)
Green Micro/Nano Electronics
, vol.435
, pp. 458
-
-
-
47
-
-
67649225738
-
Graphene: Status and prospects
-
Geim A. Graphene: status and prospects. Science, 2009. 1530
-
(2009)
Science
, pp. 1530
-
-
Geim, A.1
-
48
-
-
76249106631
-
100-GHz transistors from wafer-scale epitaxial grapheme
-
Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100-GHz transistors from wafer-scale epitaxial grapheme. Science, 2010, 327: 662
-
(2010)
Science
, vol.327
, pp. 662
-
-
Lin, Y.M.1
Dimitrakopoulos, C.2
Jenkins, K.A.3
|