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Volumn , Issue , 2005, Pages 71-73

Impact of interconnect technology scaling on SOC design methodologies

Author keywords

[No Author keywords available]

Indexed keywords

FILL METAL; RC DELAY; SIGNAL INTEGRITY;

EID: 28244498367     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (15)

References (5)
  • 1
    • 84949965579 scopus 로고    scopus 로고
    • Models for interconnect capacitance extraction
    • Husain, A, "Models for interconnect capacitance extraction", ISQED2001,pp 167-172
    • ISQED2001 , pp. 167-172
    • Husain, A.1
  • 2
    • 0011803699 scopus 로고    scopus 로고
    • Parasitic extraction: Current state of the art and future trends
    • May
    • Basel, M et al, "Parasitic extraction: current state of the art and future trends", IEEE Proceedings, Volume: 89 Issue: 5, May 2001,pp 729-739
    • (2001) IEEE Proceedings , vol.89 , Issue.5 , pp. 729-739
    • Basel, M.1
  • 3
    • 0030688506 scopus 로고    scopus 로고
    • A methodology for full-chip extraction of interconnect capacitance using Monte Carlo-based field solvers
    • Iverson, R.B et al, "A methodology for full-chip extraction of interconnect capacitance using Monte Carlo-based field solvers", SISPAD'97,pp 117-120
    • SISPAD'97 , pp. 117-120
    • Iverson, R.B.1
  • 4
    • 84942113465 scopus 로고    scopus 로고
    • Benchmarks for Interconnect Parasitic Resistance and Capacitance
    • Nagaraj NS et al, "Benchmarks for Interconnect Parasitic Resistance and Capacitance" in proc. of ISQED 2003.
    • Proc. of ISQED 2003
    • Nagaraj, N.S.1
  • 5
    • 27944500253 scopus 로고    scopus 로고
    • The impact of inductance on transients affecting gate oxide reliability
    • Nagaraj NS et al, "The Impact of Inductance on Transients Affecting Gate Oxide Reliability," in proc. of VLSI Design Conference, 2005.
    • (2005) Proc. of VLSI Design Conference
    • Nagaraj, N.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.