Investigation into the output characteristics and improvement of operation margin of IMOS (Impact Ionization MOS) devices

ECS Transactions

Volumn 18, Issue 1 PART 1, 2009, Pages 21-26

  Liu, Huichu ^a   Huang, Ru ^a   Wang, Zhenhua ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

IMPACT IONIZATION MOS; NEW STRUCTURES; ON-CURRENTS; OPERATING MARGINS; OPERATION MARGIN; OUTPUT CHARACTERISTICS; OUTPUT PERFORMANCE; SOURCE-DRAIN;

IMPACT IONIZATION; PARTICLE DETECTORS;

MOS DEVICES;

EID: 77950688732     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3096421     Document Type: Conference Paper

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