Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structure

Journal of the Electrochemical Society

Volumn 155, Issue 3, 2008, Pages

  Zhou, Falong ^a   Huang, Ru ^a   Wu, Dake ^a   An, Xia ^a   Guo, Ao ^a   Xu, Xiaoyan ^a   Zhang, Dacheng ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); DRAIN CURRENT; ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; LEAKAGE CURRENTS;

ASYMMETRIC GRADED LIGHTLY DOPED DRAIN STRUCTURES (AGLDD); DRAIN JUNCTION; OFF STATE LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 38349123944     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2830945     Document Type: Article

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