High-performance BOI FinFETs based on bulk-silicon substrate

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3246-3250

  Xu, Xiaoyan ^a   Wang, Runsheng ^a   Huang, Ru ^a   Zhuge, Jing ^a   Chen, Gang ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Bulk silicon; Double gate; FinFET; MOS; Short channel effect

Indexed keywords

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); GATES (TRANSISTOR); HEAT RESISTANCE; MOSFET DEVICES; SILICON;

BULK SILICON; DOUBLE GATE; FINFET; MOS; SHORT-CHANNEL EFFECT;

SEMICONDUCTING SILICON;

EID: 56549107942     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004646     Document Type: Article

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