A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

2010 Silicon Nanoelectronics Workshop, SNW 2010

Volumn , Issue , 2010, Pages

  Gao, Dejin ^a   Zhang, Lijie ^a   Huang, Ru ^a   Wang, Runsheng ^a   Wu, Dongmei ^a   Kuang, Yongbian ^a   Tang, Yu ^a   Yu, Zhe ^a   Wang, Albert Z H ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b University of California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW POWER APPLICATION; LOW RESET CURRENTS; NEW DEVICES; NITROGEN-DOPED; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING MECHANISM; SWITCHING VOLTAGES;

NANOELECTRONICS; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING SYSTEMS;

SWITCHING;

EID: 77957987524     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SNW.2010.5562577     Document Type: Conference Paper

References (8)

1. H Sim, et al., IEDM, p.758-761, 2005
2. Tsunoda K et al., IEDM, p.767-770, 2007
3. I. G. Baek et al. IEDM, p. 587-590, 2007 [4] Herbert Schroeder. et al., Microelectronic Engineering, p.1982, 2007
4. H. B. Lv. et al., NVSMW/ICMTD, p.52-53, 2008
5. C. H. Ho, et al., VLSI, p.228-229, 2007
6. T. Sakamoto, et al., VLSI, p.38-39, 2007
7. L. Zhang, et al., EDL, p.870, 2009
8. S. Kim, et al., EDL, p.696, 2009