Kinetics of nitrogen indiffusion in Czochralski silicon annealed in nitrogen ambient

Chinese Physics Letters

Volumn 25, Issue 2, 2008, Pages 648-650

  Li, Ming ^a   Ma, Xiang Yang ^a   Yang, De Ren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; LIGHT ABSORPTION; SILICON; TEMPERATURE;

CZOCHRALSKI SILICON; ELEVATED TEMPERATURE; FLOAT ZONE SILICON; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY; LOWS-TEMPERATURES; NITROGEN AMBIENT; NITROGEN DIFFUSIVITY;

NITROGEN;

EID: 42649101637     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/2/079     Document Type: Article

References (13)