Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

Chinese Physics B

Volumn 17, Issue 10, 2008, Pages 3836-3840

  Li, Bing Sheng ^a   Zhang, Chong Hong ^a   Hao, Xiao Peng ^b   Wang, Dan Ni ^b   Zhou, Li Hong ^a   Zhang, Hong Hua ^a   Yang, Yi Tao ^a   Zhang, Li Qing ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Nanocavity; Oxygen diffusion; Positron annihilation; Silicon dioxide

Indexed keywords

ANNEALING; ATMOSPHERIC TEMPERATURE; CHEMICAL OXYGEN DEMAND; CURING; FORMING; HELIUM; INERT GASES; INTERNAL OXIDATION; OXIDATION; OXYGEN; PACKET NETWORKS; POROUS SILICON; POSITRONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; SUPERCONDUCTING MATERIALS;

BURIED OXIDE LAYERS; CAVITY LAYERS; DRY OXYGENS; FLUENCE; HE IMPLANTATIONS; HELIUM IONS; HIGH TEMPERATURES; IN VACUUMS; LAYERED STRUCTURES; NANOCAVITY; OXYGEN DIFFUSION; OXYGEN TRANSPORTS; POROUS LAYERS; POSITRON BEAMS; SILICON DIOXIDE; SILICON ON INSULATORS; SILICON SAMPLES; THERMAL ANNEALING;

NONMETALS;

EID: 56349130218     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/10/049     Document Type: Article

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