Void shrinkage during thermal oxidation of silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 273-278

  Raineri, V ^a   Giuffrida, S ^a   Rimini, E ^a  

^a CNR IMM   (Italy)

Author keywords

He implants; Interstitials; Thermal oxidation; Voids

Indexed keywords

HELIUM; ION IMPLANTATION; OXIDATION; SHRINKAGE; TEMPERATURE;

INTERSTITIALS SURFACE DENSITY; THERMAL OXIDATION; VOID SHRINKAGE;

SEMICONDUCTING SILICON;

EID: 18844476553     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (12)