Multi-layered nanocavities in silicon with sequential helium implantation/anneal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 417-421

  Rangan, Sanjay ^a,b   Ashok, S ^a   Chen, G ^a,c   Theodore, D ^a,c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

^c MOTOROLA INC   (United States)

Author keywords

Defect clusters; Gettering; Ion implantation; Lifetime control; Nanocavities

Indexed keywords

BONDING; DEEP LEVEL TRANSIENT SPECTROSCOPY; HELIUM; ION IMPLANTATION; MULTILAYERS; POWER CONTROL; RAPID THERMAL ANNEALING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

MULTI-LAYERED NANOCAVITIES;

ION BEAMS;

EID: 0038075232     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00780-8     Document Type: Conference Paper

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