The effect of the annealing ramp rate on the formation of voids in silicon

Journal of Physics Condensed Matter

Volumn 19, Issue 46, 2007, Pages

  Ruffell, S ^a,c   Simpson, P J ^a   Knights, A P ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY;

ANNEALING RAMP; ION CHANNELING; OPEN-VOLUME DEFECTS; RAMP RATES;

SILICON;

EID: 36048978440     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/46/466202     Document Type: Article

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