The role of impurities in the formation of voids in silicon

Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 180-182

  Simpson, P J ^a   Knights, A P ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

Defects; Doping; Garboldisham; Impurities; Silicon; Voids

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; DEFECTS; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; IMPURITIES; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY;

GARBOLDISHAM; ION CHANNELING; VOID DEFECTS; VOIDS;

SILICON WAFERS;

EID: 3142730146     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.445-446.180     Document Type: Conference Paper

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