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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 134, Issue 3-4, 1998, Pages 360-364

Gettering of Cu by He-induced cavities in SIMOX materials

(7) Zhang, Miao a Wang, Lianwei a Gao, Jianxia a Lin, Chenglu a Hemment, P L F b Gutjahr, K c Gosele U c

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b UNIVERSITY OF SURREY (United Kingdom)

c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; HELIUM; PURIFICATION; RADIATION DETECTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE (BOX) LAYERS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

ION IMPLANTATION;

EID: 0032025034 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00558-2 Document Type: Article

Times cited : (4)

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