Conduction mechanism and reliability characteristics of a metal-insulator-metal capacitor with single Zro2 layer

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Kwon, Hyuk Min ^a   Han, In Shik ^a   Park, Sang Uk ^a   Bok, Jung Deuk ^a   Jung, Yi Jung ^a   Shin, Hong Sik ^a   Kang, Chang Yong ^b   Lee, Byoung Hun ^c   Jammy, Raj ^b   Lee, Ga Won ^a   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

^b SEMATECH   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONSTANT VOLTAGE STRESS; DOMINANT MECHANISM; ELECTRICAL CHARACTERISTIC; FRENKEL-POOLE EMISSION; HIGH ELECTRIC FIELDS; HIGH-CAPACITANCE DENSITY; HIGH-K DIELECTRIC; LOW-FIELD REGION; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; RELIABILITY CHARACTERISTICS; SCHOTTKY EMISSIONS; STRESS TIME; TRAP ENERGY LEVELS;

CAPACITORS; ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 79955402650     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DD02     Document Type: Article

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