Characteristics of Al2O3TiO2 nanolaminates and AlTiO thin films on Si

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 344-346

  Mikhelashvili, V ^a   Garshtein, E ^a   Eisenstein, Gad ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Chemical and structural properties; Electrical characterization; Electron beam gun deposition; Thin dielectric films

Indexed keywords

ALUMINA; CURRENT DENSITY; DIELECTRIC MATERIALS; HYSTERESIS; LAMINATES; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; THIN FILMS; TITANIUM DIOXIDE;

ELECTRON BEAM GUN DEPOSITION; METAL-INSULATOR-SEMICONDUCTOR STRUCTURE; NANOLAMINATES; THIN DIELECTRIC FILMS;

SEMICONDUCTING SILICON;

EID: 33646240049     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873879     Document Type: Article

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