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Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

Physical and electrical properties of nanolaminated HfO 2/ LaAlO 3HfO 2 dielectric on Si

(4) Liang, Y a,b Theodore, N D a Curless, J a Tracy, C a

a FREESCALE SEMICONDUCTOR INC (United States)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS DIELECTRIC; DEFECTIVITY; LAMINATED DIELECTRIC; POLYCRYSTALLINE HF O2;

CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; HEAT TREATMENT; HYSTERESIS; LAMINATING; LANTHANUM COMPOUNDS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SILICON;

HAFNIUM COMPOUNDS;

EID: 33645686386 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2186026 Document Type: Article

Times cited : (8)

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